FDD1600N10ALZD
MOSFET N-CH 100V 6.8A TO252-4L
Transistors Fets Mosfets Single
TO-252-5, DPak (4 Leads + Tab), TO-252AD
PowerTrench®
Obsolete
Price available on request
MOQ: 902 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDD1600N10ALZD |
| Package / Case | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 160mOhm @ 3.4A, 10V |
| Vgs(th) (Max) | 2.8V @ 250µA |
| Gate Charge (Qg) | 3.61 nC @ 10 V |
| Input Capacitance (Ciss) | 225 pF @ 50 V |
| Power Dissipation (Max) | 14.9W (Tc) |
| Drive Voltage | 5V, 10V |
| Supplier Device Package | TO-252-4 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FDD1600N10ALZD by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-5, DPak (4 Leads + Tab), TO-252AD package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 160mOhm @ 3.4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDD1600N10ALZD
Alternatives & Replacements
View All →SPD100N03S2L-04
MOSFET N-CH 30V 100A TO252-5
FDD850N10LD
MOSFET N-CH 100V 15.3A TO252-4
DMTH6005LK3Q-13
MOSFET N-CH 60V 90A TO252-2
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 3.4A, 10V |
| Power Dissipation (Max) | 14.9W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 3.61 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
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