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Diodes IncorporatedTO-252-5, DPak (4 Leads + Tab), TO-252ADRoHS

DMTH6005LK3Q-13

MOSFET N-CH 60V 90A TO252-2

DMTH6005LK3Q-13 by Diodes Incorporated
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Series

Automotive, AEC-Q101

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandDiodes Incorporated
ModelDMTH6005LK3Q-13
Package / CaseTO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)5.6mOhm @ 50A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)47.1 nC @ 10 V
Input Capacitance (Ciss)2962 pF @ 30 V
Power Dissipation (Max)2.1W (Ta), 100W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageTO-252-4L
RoHSRoHS
Part StatusActive

Application & Notes

DMTH6005LK3Q-13 by Diodes Incorporated is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-5, DPak (4 Leads + Tab), TO-252AD package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.6mOhm @ 50A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs5.6mOhm @ 50A, 10V
Power Dissipation (Max)2.1W (Ta), 100W (Tc)
Gate Charge (Qg) (Max) @ Vgs47.1 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds2962 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C90A (Tc)

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