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Rochester Electronics, LLCTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

FDB7042L

N-CHANNEL POWER MOSFET

FDB7042L by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

PowerTrench®

Status

Active

Datasheet

View Datasheet ↗

$0.55 / unit (market reference)

MOQ: 545 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDB7042L
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)7.5mOhm @ 25A, 10V
Vgs(th) (Max)2V @ 250mA
Gate Charge (Qg)51 nC @ 4.5 V
Input Capacitance (Ciss)2418 pF @ 15 V
Power Dissipation (Max)83W (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageTO-263AB
RoHSRoHS
Part StatusActive

Application & Notes

FDB7042L by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.5mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FDB7042L

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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onsemiStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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MOSFET N-CH 40V 28A TO263AB

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MOSFET N-CH 24V 90A D2PAK

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IPB65R225C7ATMA1

MOSFET N-CH 650V 11A D2PAK

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB6035AL

N-CHANNEL POWER MOSFET

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRF3710ZSTRR

MOSFET N-CH 100V 59A D2PAK

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Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB80N03S2L-05

MOSFET N-CH 30V 80A TO263-3

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250mA
Rds On (Max) @ Id, Vgs7.5mOhm @ 25A, 10V
Power Dissipation (Max)83W (Ta)
Gate Charge (Qg) (Max) @ Vgs51 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds2418 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C50A (Ta)

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