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onsemiTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

FCB290N80

MOSFET N-CH 800V 17A D2PAK

FCB290N80 by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

SuperFET® II

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
Brandonsemi
ModelFCB290N80
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)800 V
Rds On (Max)290mOhm @ 8.5A, 10V
Vgs(th) (Max)4.5V @ 1.7mA
Gate Charge (Qg)75 nC @ 10 V
Input Capacitance (Ciss)3205 pF @ 100 V
Power Dissipation (Max)212W (Tc)
Drive Voltage10V
Supplier Device PackageD²PAK (TO-263)
RoHSRoHS
Part StatusActive

Application & Notes

FCB290N80 by onsemi is an N-channel power MOSFET rated at 800 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 290mOhm @ 8.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 1.7mA
Rds On (Max) @ Id, Vgs290mOhm @ 8.5A, 10V
Power Dissipation (Max)212W (Tc)
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Drain to Source Voltage (Vdss)800 V
Input Capacitance (Ciss) (Max) @ Vds3205 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C17A (Tc)

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