DMP1011UCB9-7
MOSFET P-CH 8V 10A U-WLB1515-9
Transistors Fets Mosfets Single
9-UFBGA, WLBGA
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMP1011UCB9-7 |
| Package / Case | 9-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 8 V |
| Rds On (Max) | 10mOhm @ 2A, 4.5V |
| Vgs(th) (Max) | 1.1V @ 250µA |
| Gate Charge (Qg) | 10.5 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1060 pF @ 4 V |
| Power Dissipation (Max) | 890mW (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | U-WLB1515-9 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMP1011UCB9-7 by Diodes Incorporated is an N-channel power MOSFET rated at 8 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 9-UFBGA, WLBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10mOhm @ 2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMP1011UCB9-7
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | -6V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 2A, 4.5V |
| Power Dissipation (Max) | 890mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 4 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
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