DMN1016UCB6-7
MOSFET N-CH 12V 5.5A U-WLB1510-6
Transistors Fets Mosfets Single
6-UFBGA, WLBGA
Last Time Buy
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMN1016UCB6-7 |
| Package / Case | 6-UFBGA, WLBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 12 V |
| Rds On (Max) | 20mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 4.2 nC @ 4.5 V |
| Input Capacitance (Ciss) | 423 pF @ 6 V |
| Power Dissipation (Max) | 920mW (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | U-WLB1510-6 |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
DMN1016UCB6-7 by Diodes Incorporated is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UFBGA, WLBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 1.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMN1016UCB6-7
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max) | 920mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 4.2 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 423 pF @ 6 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
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