CSD25211W1015
MOSFET P-CH 20V 3.2A 6DSBGA
Transistors Fets Mosfets Single
6-UFBGA, DSBGA
NexFET™
Active
$0.69 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | CSD25211W1015 |
| Package / Case | 6-UFBGA, DSBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 33mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) | 1.1V @ 250µA |
| Gate Charge (Qg) | 4.1 nC @ 4.5 V |
| Input Capacitance (Ciss) | 570 pF @ 10 V |
| Power Dissipation (Max) | 1W (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CSD25211W1015 by Texas Instruments is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UFBGA, DSBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 33mOhm @ 1.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CSD25211W1015
Alternatives & Replacements
View All →CSD23203WT
MOSFET P-CH 8V 3A 6DSBGA
CSD25303W1015
MOSFET P-CH 20V 3A 6DSBGA
CSD25304W1015T
MOSFET P-CH 20V 3A 6DSBGA
CSD13303W1015
MOSFET N-CH 12V 31A 6DSBGA
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | -6V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max) | 1W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
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