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Rochester Electronics, LLCSOT-23-6 Thin, TSOT-23-6RoHS

CPH6318-TL-E

MOSFET P-CH 12V 6A 6CPH

CPH6318-TL-E by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6 Thin, TSOT-23-6

Status

Active

Datasheet

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$0.10 / unit (market reference)

MOQ: 2885 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelCPH6318-TL-E
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature150°C
FET TypeP-Channel
Drain to Source Voltage (Vdss)12 V
Rds On (Max)34mOhm @ 3A, 4.5V
Vgs(th) (Max)1V @ 1mA
Gate Charge (Qg)22 nC @ 4.5 V
Input Capacitance (Ciss)1900 pF @ 6 V
Power Dissipation (Max)1.6W (Ta)
Supplier Device Package6-CPH
RoHSRoHS
Part StatusActive

Application & Notes

CPH6318-TL-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 34mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 1mA
Rds On (Max) @ Id, Vgs34mOhm @ 3A, 4.5V
Power Dissipation (Max)1.6W (Ta)
Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 6 V
Current - Continuous Drain (Id) @ 25°C6A (Ta)

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