BUK96180-100A,118
NEXPERIA BUK96180-100A - 11A, 10
Transistors Fets Mosfets Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Automotive, AEC-Q101, TrenchMOS™
Active
Price available on request
MOQ: 1104 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | BUK96180-100A,118 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 173mOhm @ 5A, 10V |
| Vgs(th) (Max) | 2V @ 1mA |
| Input Capacitance (Ciss) | 619 pF @ 25 V |
| Power Dissipation (Max) | 54W (Ta) |
| Supplier Device Package | D2PAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BUK96180-100A,118 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 173mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BUK96180-100A,118
Alternatives & Replacements
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±15V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Rds On (Max) @ Id, Vgs | 173mOhm @ 5A, 10V |
| Power Dissipation (Max) | 54W (Ta) |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 619 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
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