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Rochester Electronics, LLCTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

BUK9614-60E,118

NEXPERIA BUK9614-60E - POWER FIE

BUK9614-60E,118 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

Automotive, AEC-Q101, TrenchMOS™

Status

Active

Price available on request

MOQ: 574 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelBUK9614-60E,118
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)12.8mOhm @ 15A, 10V
Vgs(th) (Max)2.1V @ 1mA
Gate Charge (Qg)20.5 nC @ 5 V
Input Capacitance (Ciss)2651 pF @ 25 V
Power Dissipation (Max)96W (Tc)
Drive Voltage5V
Supplier Device PackageD2PAK
RoHSRoHS
Part StatusActive

Application & Notes

BUK9614-60E,118 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 12.8mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.1V @ 1mA
Rds On (Max) @ Id, Vgs12.8mOhm @ 15A, 10V
Power Dissipation (Max)96W (Tc)
Gate Charge (Qg) (Max) @ Vgs20.5 nC @ 5 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds2651 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)5V
Current - Continuous Drain (Id) @ 25°C56A (Tc)

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