BUK7Y25-80E/GFX
MOSFET N-CH 80V 39A LFPAK56
Transistors Fets Mosfets Single
SC-100, SOT-669
TrenchMOS™
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | BUK7Y25-80E/GFX |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 80 V |
| Rds On (Max) | 25mOhm @ 10A, 10V |
| Vgs(th) (Max) | 4V @ 1mA |
| Gate Charge (Qg) | 25.9 nC @ 10 V |
| Input Capacitance (Ciss) | 1800 pF @ 25 V |
| Power Dissipation (Max) | 95W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | LFPAK56, Power-SO8 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
BUK7Y25-80E/GFX by NXP USA Inc. is an N-channel power MOSFET rated at 80 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-100, SOT-669 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 25mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BUK7Y25-80E/GFX
Alternatives & Replacements
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NEXPERIA PH3120L - 100A, 20V, 0.
PH7030AL,115
MOSFET N-CH 30V 76A LFPAK56
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 10A, 10V |
| Power Dissipation (Max) | 95W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 25.9 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
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