BUK7107-55AIE,118
NEXPERIA BUK7107 - N-CHANNEL TRE
Transistors Fets Mosfets Single
TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Automotive, AEC-Q101, TrenchMOS™
Active
Price available on request
MOQ: 188 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | BUK7107-55AIE,118 |
| Package / Case | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 55 V |
| Rds On (Max) | 7mOhm @ 50A, 10V |
| Vgs(th) (Max) | 4V @ 1mA |
| Gate Charge (Qg) | 116 nC @ 10 V |
| Input Capacitance (Ciss) | 4500 pF @ 25 V |
| Power Dissipation (Max) | 272W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | D2PAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BUK7107-55AIE,118 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-5, D²Pak (4 Leads + Tab), TO-263BB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7mOhm @ 50A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BUK7107-55AIE,118
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Current Sensing |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 50A, 10V |
| Power Dissipation (Max) | 272W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
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