BTS244ZE3062AATMA1
N-CHANNEL POWER MOSFET

Transistors Fets Mosfets Single
TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
Obsolete
Price available on request
MOQ: 114 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | BTS244ZE3062AATMA1 |
| Package / Case | TO-263-5, D²Pak (4 Leads + Tab), TO-263BB |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 55 V |
| Rds On (Max) | 13mOhm @ 19A, 10V |
| Vgs(th) (Max) | 2V @ 130µA |
| Gate Charge (Qg) | 130 nC @ 10 V |
| Input Capacitance (Ciss) | 2660 pF @ 25 V |
| Power Dissipation (Max) | 170W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | PG-TO263-5-2 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
BTS244ZE3062AATMA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-5, D²Pak (4 Leads + Tab), TO-263BB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 13mOhm @ 19A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BTS244ZE3062AATMA1
Alternatives & Replacements
View All →BTS244ZE3062ANTMA1
BTS244 - TEMPFET, AUTOMOTIVE LOW
BUK7107-55AIE,118
NEXPERIA BUK7107 - N-CHANNEL TRE
BTS244ZE3062AATMA2
MOSFET N-CH 55V 35A TO263-5
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 19A, 10V |
| Power Dissipation (Max) | 170W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2660 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
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