PC
Rochester Electronics, LLCTO-263-7, D²Pak (6 Leads + Tab)RoHS

BUK6C3R3-75C,118

NEXPERIA BUK6C3R3 - N-CHANNEL TR

BUK6C3R3-75C,118 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-7, D²Pak (6 Leads + Tab)

Series

Automotive, AEC-Q101, TrenchMOS™

Status

Active

$1.47 / unit (market reference)

MOQ: 205 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelBUK6C3R3-75C,118
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)75 V
Rds On (Max)3.4mOhm @ 90A, 10V
Vgs(th) (Max)2.8V @ 1mA
Gate Charge (Qg)253 nC @ 10 V
Input Capacitance (Ciss)15800 pF @ 25 V
Power Dissipation (Max)300W (Tc)
Drive Voltage10V
Supplier Device PackageD2PAK-7
RoHSRoHS
Part StatusActive

Application & Notes

BUK6C3R3-75C,118 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 75 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.4mOhm @ 90A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±16V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.8V @ 1mA
Rds On (Max) @ Id, Vgs3.4mOhm @ 90A, 10V
Power Dissipation (Max)300W (Tc)
Gate Charge (Qg) (Max) @ Vgs253 nC @ 10 V
Drain to Source Voltage (Vdss)75 V
Input Capacitance (Ciss) (Max) @ Vds15800 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C181A (Tc)

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