BSZ15DC02KDHXTMA1
MOSFET N/P-CH 20V 5.1/3.2A TDSON
Transistors Fets Mosfets Arrays
8-PowerTDFN
Automotive, AEC-Q101, HEXFET®
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BSZ15DC02KDHXTMA1 |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N and P-Channel Complementary |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 55mOhm @ 5.1A, 4.5V |
| Vgs(th) (Max) | 1.4V @ 110µA |
| Gate Charge (Qg) | 2.8nC @ 4.5V |
| Input Capacitance (Ciss) | 419pF @ 10V |
| Power Dissipation (Max) | 2.5W |
| Supplier Device Package | PG-TSDSON-8-FL |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSZ15DC02KDHXTMA1 by Infineon Technologies is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 55mOhm @ 5.1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSZ15DC02KDHXTMA1
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All Technical Specifications
| FET Type | N and P-Channel Complementary |
| FET Feature | Logic Level Gate, 2.5V Drive |
| Power - Max | 2.5W |
| Vgs(th) (Max) @ Id | 1.4V @ 110µA |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 5.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 419pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A, 3.2A |
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