BSP315
MOSFET P-CH 50V 1A SOT223
Transistors Fets Mosfets Single
TO-261-4, TO-261AA
Obsolete
$0.17 / unit (market reference)
MOQ: 1803 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | BSP315 |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 50 V |
| Rds On (Max) | 0.8Ohms |
| Power Dissipation (Max) | 1.8W |
| Supplier Device Package | SOT-223 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
BSP315 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 50 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 0.8Ohms. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSP315
Alternatives & Replacements
View All →BSP318SL6327HTSA1
MOSFET N-CH 60V 2.6A SOT223-4
PMT760EN,115
MOSFET N-CH 100V 900MA SOT223
BSP135L6327HTSA1
MOSFET N-CH 600V 120MA SOT223-4
PHT6N06LT,135
MOSFET N-CH 55V 2.5A SOT223
BSP125L6327HTSA1
MOSFET N-CH 600V 120MA SOT223-4
BSP135L6906HTSA1
MOSFET N-CH 600V 120MA SOT223-4
All Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 0.8Ohms |
| Power Dissipation (Max) | 1.8W |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain (Id) @ 25°C | 1A |
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