BSP100,135
NEXPERIA BSP100 - 3.5A, 30V, 0.1
Transistors Fets Mosfets Single
TO-261-4, TO-261AA
TrenchMOS™
Active
$0.19 / unit (market reference)
MOQ: 1603 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | BSP100,135 |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 100mOhm @ 2.2A, 10V |
| Vgs(th) (Max) | 2.8V @ 1mA |
| Gate Charge (Qg) | 6 nC @ 10 V |
| Input Capacitance (Ciss) | 250 pF @ 20 V |
| Power Dissipation (Max) | 8.3W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | SOT-223 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSP100,135 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 100mOhm @ 2.2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSP100,135
Alternatives & Replacements
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MOSFET N-CH 600V 120MA SOT223-4
BSP135L6906HTSA1
MOSFET N-CH 600V 120MA SOT223-4
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V |
| Power Dissipation (Max) | 8.3W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
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