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Infineon TechnologiesSOT-23-6 Thin, TSOT-23-6RoHS

BSL372SNH6327XTSA1

MOSFET N-CH 100V 2A TSOP-6

BSL372SNH6327XTSA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

SOT-23-6 Thin, TSOT-23-6

Series

OptiMOS™

Status

Obsolete

Datasheet

View Datasheet ↗

$0.17 / unit (market reference)

MOQ: 1731 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelBSL372SNH6327XTSA1
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)220mOhm @ 2A, 10V
Vgs(th) (Max)1.8V @ 218µA
Gate Charge (Qg)14.3 nC @ 10 V
Input Capacitance (Ciss)329 pF @ 25 V
Power Dissipation (Max)2W (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackagePG-TSOP6-6
RoHSRoHS
Part StatusObsolete

Application & Notes

BSL372SNH6327XTSA1 by Infineon Technologies is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 220mOhm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for BSL372SNH6327XTSA1

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

FDC633N

MOSFET N-CH 30V 5.2A SUPERSOT6

Request QuoteRFQ →
Infineon TechnologiesStockSOT-23-6 Thin, TSOT-23-6

BSL307SPL6327HTSA1

MOSFET P-CH 30V 5.5A TSOP-6

Request QuoteRFQ →
Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

CPH6355-TL-W

SINGLE P-CHANNEL POWER MOSFET, -

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Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

FDC655AN

MOSFET N-CH 30V 6.3A SUPERSOT6

Request QuoteRFQ →
Rochester Electronics, LLCStockSOT-23-6 Thin, TSOT-23-6

SI3457DV

SMALL SIGNAL FIELD-EFFECT TRANSI

Request QuoteRFQ →
onsemiStockSOT-23-6 Thin, TSOT-23-6

NTGD4169FT1G

MOSFET N-CH 30V 2.6A 6TSOP

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.8V @ 218µA
Rds On (Max) @ Id, Vgs220mOhm @ 2A, 10V
Power Dissipation (Max)2W (Ta)
Gate Charge (Qg) (Max) @ Vgs14.3 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds329 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2A (Ta)

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