BSC0925NDATMA1
MOSFET 2N-CH 30V 15A TISON8
Transistors Fets Mosfets Arrays
8-PowerTDFN
OptiMOS™
Active
$1.08 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BSC0925NDATMA1 |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N Channel (Dual Buck Chopper) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 5mOhm @ 20A, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 17nC @ 10V |
| Input Capacitance (Ciss) | 1157pF @ 15V |
| Power Dissipation (Max) | 2.5W |
| Supplier Device Package | PG-TISON-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSC0925NDATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSC0925NDATMA1
Alternatives & Replacements
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FDMS3616S
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BSC0924NDIATMA1
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All Technical Specifications
| FET Type | 2 N Channel (Dual Buck Chopper) |
| FET Feature | Standard |
| Power - Max | 2.5W |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1157pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 15A |
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