BSC0910NDIATMA1
MOSFET 2N-CH 25V 16A/31A TISON8
Transistors Fets Mosfets Arrays
8-PowerTDFN
OptiMOS™
Active
$2.55 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BSC0910NDIATMA1 |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| Drain to Source Voltage (Vdss) | 25V |
| Rds On (Max) | 4.6mOhm @ 25A, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Gate Charge (Qg) | 6.6nC @ 4.5V |
| Input Capacitance (Ciss) | 4500pF @ 12V |
| Power Dissipation (Max) | 1W |
| Supplier Device Package | PG-TISON-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSC0910NDIATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.6mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSC0910NDIATMA1
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) Asymmetrical |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Power - Max | 1W |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 25A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 25V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500pF @ 12V |
| Current - Continuous Drain (Id) @ 25°C | 11A, 31A |
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