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Rochester Electronics, LLCTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

AUIRFS4310

MOSFET N-CH 100V 75A D2PAK

AUIRFS4310 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

HEXFET®

Status

Active

Datasheet

View Datasheet ↗

$2.35 / unit (market reference)

MOQ: 128 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelAUIRFS4310
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)7mOhm @ 75A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)250 nC @ 10 V
Input Capacitance (Ciss)7670 pF @ 50 V
Power Dissipation (Max)300W (Tc)
Drive Voltage10V
Supplier Device PackageD2PAK
RoHSRoHS
Part StatusActive

Application & Notes

AUIRFS4310 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7mOhm @ 75A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for AUIRFS4310

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs7mOhm @ 75A, 10V
Power Dissipation (Max)300W (Tc)
Gate Charge (Qg) (Max) @ Vgs250 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds7670 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C75A (Tc)

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