AUIRF7675M2TR
MOSFET N-CH 150V 4.4A DIRECTFET
Transistors Fets Mosfets Single
DirectFET™ Isometric M2
HEXFET®
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | AUIRF7675M2TR |
| Package / Case | DirectFET™ Isometric M2 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 150 V |
| Rds On (Max) | 56mOhm @ 11A, 10V |
| Vgs(th) (Max) | 5V @ 100µA |
| Gate Charge (Qg) | 32 nC @ 10 V |
| Input Capacitance (Ciss) | 1360 pF @ 25 V |
| Power Dissipation (Max) | 2.7W (Ta), 45W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | DirectFET™ Isometric M2 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
AUIRF7675M2TR by Infineon Technologies is an N-channel power MOSFET rated at 150 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The DirectFET™ Isometric M2 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 56mOhm @ 11A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for AUIRF7675M2TR
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Rds On (Max) @ Id, Vgs | 56mOhm @ 11A, 10V |
| Power Dissipation (Max) | 2.7W (Ta), 45W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1360 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Ta), 18A (Tc) |
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