PC
Microchip TechnologyModuleRoHS

APTMC120HRM40CT3AG

POWER MODULE - SIC MOSFET

Subcategory

Transistors Fets Mosfets Arrays

Package

Module

Status

Active

$345.79 / unit (market reference)

MOQ: 3 pcs

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Parameters

ParameterValue
BrandMicrochip Technology
ModelAPTMC120HRM40CT3AG
Package / CaseModule
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Rds On (Max)34mOhm @ 50A, 20V
Vgs(th) (Max)3V @ 12.5mA
Gate Charge (Qg)161nC @ 5V
Input Capacitance (Ciss)2788pF @ 1000V
Power Dissipation (Max)375W
Supplier Device PackageSP3
RoHSRoHS
Part StatusActive

Application & Notes

APTMC120HRM40CT3AG by Microchip Technology is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 34mOhm @ 50A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Power - Max375W
Vgs(th) (Max) @ Id3V @ 12.5mA
Rds On (Max) @ Id, Vgs34mOhm @ 50A, 20V
Gate Charge (Qg) (Max) @ Vgs161nC @ 5V
Drain to Source Voltage (Vdss)1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds2788pF @ 1000V
Current - Continuous Drain (Id) @ 25°C73A (Tc)

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