A3G26H200W17SR3
AIRFAST RF POWER GAN TRANSISTOR,
Transistors Fets Mosfets Rf
NI-780S-4S2S
Active
$188.96 / unit (market reference)
MOQ: 250 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | A3G26H200W17SR3 |
| Package / Case | NI-780S-4S2S |
| Supplier Device Package | NI-780S-4S2S |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
A3G26H200W17SR3 by NXP USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The NI-780S-4S2S package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for A3G26H200W17SR3
Alternatives & Replacements
View All →EFC4601R-M-TR
NCH 2.5V DRIVE SERIES
MCH6646-TL-E
NCH+NCH 1.8 DRIVE SERIES
NE3513M04-T2B-A
SMALL SIGNAL N-CHANNEL MOSFET
EC4404C-TL
NCH 1.5V DRIVE SERIES
BF1202WR,135
MOSFET N-CH DUAL GATE 4DFP
MCH6307-G-TL-E
PCH 1.8V DRIVE SERIES
All Technical Specifications
| Gain | 14.2dB |
| Frequency | 2.496GHz ~ 2.69GHz |
| Current - Test | 120 mA |
| Power - Output | 34W |
| Voltage - Test | 48 V |
| Voltage - Rated | 125 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.