A2G35S200-01SR3
AIRFAST RF POWER GAN TRANSISTOR
Transistors Fets Mosfets Rf
NI-400S-2S
Active
$264.51 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | A2G35S200-01SR3 |
| Package / Case | NI-400S-2S |
| Supplier Device Package | NI-400S-2S |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
A2G35S200-01SR3 by NXP USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The NI-400S-2S package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for A2G35S200-01SR3
Alternatives & Replacements
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AIRFAST RF POWER GAN TRANSISTOR
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FET RF 65V 3.6GHZ NI-400S
All Technical Specifications
| Gain | 16.1dB |
| Frequency | 3.4GHz ~ 3.6GHz |
| Current - Test | 291 mA |
| Power - Output | 180W |
| Voltage - Test | 48 V |
| Transistor Type | GaN HEMT |
| Voltage - Rated | 125 V |
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