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Renesas Electronics America IncTO-226-3, TO-92-3 Long BodyRoHS

2SK4093TZ-E

MOSFET N-CH 250V 1A TO92MOD

2SK4093TZ-E by Renesas Electronics America Inc
Subcategory

Transistors Fets Mosfets Single

Package

TO-226-3, TO-92-3 Long Body

Status

Obsolete

Price available on request

MOQ: 332 pcs

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Parameters

ParameterValue
BrandRenesas Electronics America Inc
Model2SK4093TZ-E
Package / CaseTO-226-3, TO-92-3 Long Body
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)250 V
Rds On (Max)2.6Ohm @ 500mA, 4V
Gate Charge (Qg)5.5 nC @ 4 V
Input Capacitance (Ciss)140 pF @ 25 V
Power Dissipation (Max)900mW (Ta)
Drive Voltage2.5V, 4V
Supplier Device PackageTO-92MOD
RoHSRoHS
Part StatusObsolete

Application & Notes

2SK4093TZ-E by Renesas Electronics America Inc is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 Long Body package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.6Ohm @ 500mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs2.6Ohm @ 500mA, 4V
Power Dissipation (Max)900mW (Ta)
Gate Charge (Qg) (Max) @ Vgs5.5 nC @ 4 V
Drain to Source Voltage (Vdss)250 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4V
Current - Continuous Drain (Id) @ 25°C1A (Ta)

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