2SK3659-AZ
MOSFET N-CH 20V 65A TO220-3
Transistors Fets Mosfets Single
TO-220-3 Isolated Tab
Obsolete
Price available on request
MOQ: 214 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | 2SK3659-AZ |
| Package / Case | TO-220-3 Isolated Tab |
| Mounting Type | Through Hole |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 5.7mOhm @ 40A, 10V |
| Vgs(th) (Max) | 2.5V @ 1mA |
| Gate Charge (Qg) | 32 nC @ 10 V |
| Input Capacitance (Ciss) | 1700 pF @ 10 V |
| Supplier Device Package | TO-220-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SK3659-AZ by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Isolated Tab package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.7mOhm @ 40A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SK3659-AZ
Alternatives & Replacements
View All →N0600N-S17-AY
MOSFET N-CH 60V 30A TO220
N0602N-S19-AY
MOSFET N-CH 60V 100A TO220-3
2SJ649-AZ
MOSFET P-CH 60V 20A TO220
All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 40A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
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