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Renesas Electronics America IncTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

2SK3479-Z-E1-AZ

MOSFET N-CH 100V 83A TO-263

2SK3479-Z-E1-AZ by Renesas Electronics America Inc
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Last Time Buy

Price available on request

MOQ: 2000 pcs

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Parameters

ParameterValue
BrandRenesas Electronics America Inc
Model2SK3479-Z-E1-AZ
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)11mOhm @ 42A, 10V
Gate Charge (Qg)210 nC @ 10 V
Input Capacitance (Ciss)11000 pF @ 10 V
Power Dissipation (Max)1.5W (Ta), 125W (Tc)
Supplier Device PackageTO-263, TO-220SMD
RoHSRoHS
Part StatusLast Time Buy

Application & Notes

2SK3479-Z-E1-AZ by Renesas Electronics America Inc is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 11mOhm @ 42A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs11mOhm @ 42A, 10V
Power Dissipation (Max)1.5W (Ta), 125W (Tc)
Gate Charge (Qg) (Max) @ Vgs210 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds11000 pF @ 10 V
Current - Continuous Drain (Id) @ 25°C83A (Tc)

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