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Toshiba Semiconductor and StorageTO-220-3, Short TabRoHS

2SK3309(Q)

MOSFET N-CH 450V 10A TO220FL

2SK3309(Q) by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3, Short Tab

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
Model2SK3309(Q)
Package / CaseTO-220-3, Short Tab
Mounting TypeThrough Hole
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)450 V
Rds On (Max)650mOhm @ 5A, 10V
Vgs(th) (Max)5V @ 1mA
Gate Charge (Qg)23 nC @ 10 V
Input Capacitance (Ciss)920 pF @ 10 V
Power Dissipation (Max)65W (Tc)
Drive Voltage10V
Supplier Device PackageTO-220FL
RoHSRoHS
Part StatusObsolete

Application & Notes

2SK3309(Q) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 450 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3, Short Tab package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 650mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 1mA
Rds On (Max) @ Id, Vgs650mOhm @ 5A, 10V
Power Dissipation (Max)65W (Tc)
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Drain to Source Voltage (Vdss)450 V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C10A (Ta)

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