Yangzhou Yangjie Electronic Technology Co.,Ltd8-PowerVDFNRoHS
YJQ55P02A-F1-1100HF
P-CH MOSFET 20V 55A DFN3333-8L
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerVDFN
Status
Active
$0.67 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Yangzhou Yangjie Electronic Technology Co.,Ltd |
| Model | YJQ55P02A-F1-1100HF |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 8.3mOhm @ 15A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 12.7 nC @ 10 V |
| Input Capacitance (Ciss) | 6358 pF @ 10 V |
| Power Dissipation (Max) | 3.2W (Ta), 38W (Tc) |
| Drive Voltage | 1.8V, 4.5V |
| Supplier Device Package | 8-DFN (3.3x3.3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
YJQ55P02A-F1-1100HF by Yangzhou Yangjie Electronic Technology Co.,Ltd is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.3mOhm @ 15A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 15A, 4.5V |
| Power Dissipation (Max) | 3.2W (Ta), 38W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6358 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 55A (Ta) |
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