Yangzhou Yangjie Electronic Technology Co.,Ltd6-UDFN Exposed PadRoHS
YJQ4666B-F1-1100HF
P-CH MOSFET 16V 7A DFN2020-6L-C-
Category
Subcategory
Transistors Fets Mosfets Single
Package
6-UDFN Exposed Pad
Status
Active
$0.47 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Yangzhou Yangjie Electronic Technology Co.,Ltd |
| Model | YJQ4666B-F1-1100HF |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 36.5mOhm @ 7A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 40.1 nC @ 4.5 V |
| Input Capacitance (Ciss) | 852 pF @ 10 V |
| Power Dissipation (Max) | 2.2W (Tc) |
| Drive Voltage | 1.8V, 4.5V |
| Supplier Device Package | 6-DFN (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
YJQ4666B-F1-1100HF by Yangzhou Yangjie Electronic Technology Co.,Ltd is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 36.5mOhm @ 7A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 36.5mOhm @ 7A, 4.5V |
| Power Dissipation (Max) | 2.2W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 40.1 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 852 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
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