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Yangzhou Yangjie Electronic Technology Co.,Ltd8-PowerVDFNRoHS

YJQ40P03A-F1-1100HF

P-CH MOSFET 30V 40A DFN3333-8L

Subcategory

Transistors Fets Mosfets Single

Package

8-PowerVDFN

Status

Active

$0.58 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandYangzhou Yangjie Electronic Technology Co.,Ltd
ModelYJQ40P03A-F1-1100HF
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)13mOhm @ 20A, 20V
Vgs(th) (Max)2.8V @ 250µA
Gate Charge (Qg)40.1 nC @ 10 V
Input Capacitance (Ciss)2152 pF @ 15 V
Power Dissipation (Max)32W (Ta)
Drive Voltage4.5V, 20V
Supplier Device Package8-DFN (3.3x3.3)
RoHSRoHS
Part StatusActive

Application & Notes

YJQ40P03A-F1-1100HF by Yangzhou Yangjie Electronic Technology Co.,Ltd is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 13mOhm @ 20A, 20V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeP-Channel
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.8V @ 250µA
Rds On (Max) @ Id, Vgs13mOhm @ 20A, 20V
Power Dissipation (Max)32W (Ta)
Gate Charge (Qg) (Max) @ Vgs40.1 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds2152 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 20V
Current - Continuous Drain (Id) @ 25°C40A (Ta)

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