PartsCubeGlobal
Yangzhou Yangjie Electronic Technology Co.,LtdSC-70, SOT-323RoHS

YJL2101W-F2-0000HF

P-CH MOSFET 20V 2A SOT-323

Subcategory

Transistors Fets Mosfets Single

Package

SC-70, SOT-323

Status

Active

$0.29 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandYangzhou Yangjie Electronic Technology Co.,Ltd
ModelYJL2101W-F2-0000HF
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)130mOhm @ 1.5A, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)4.5 nC @ 4.5 V
Input Capacitance (Ciss)327 pF @ 10 V
Power Dissipation (Max)250mW (Ta)
Drive Voltage1.8V, 4.5V
Supplier Device PackageSOT-323
RoHSRoHS
Part StatusActive

Application & Notes

YJL2101W-F2-0000HF by Yangzhou Yangjie Electronic Technology Co.,Ltd is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-70, SOT-323 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 130mOhm @ 1.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

You may also need

3LP01M-TL-Honsemi

MOSFET P-CH 30V 100MA 3MCP

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs130mOhm @ 1.5A, 4.5V
Power Dissipation (Max)250mW (Ta)
Gate Charge (Qg) (Max) @ Vgs4.5 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds327 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C2A (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.