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Yangzhou Yangjie Electronic Technology Co.,LtdTO-236-3, SC-59, SOT-23-3RoHS

YJL03N06B-F2-0000HF

N-CH MOSFET 60V 3A SOT-23-3L

Subcategory

Transistors Fets Mosfets Single

Package

TO-236-3, SC-59, SOT-23-3

Status

Active

$0.47 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandYangzhou Yangjie Electronic Technology Co.,Ltd
ModelYJL03N06B-F2-0000HF
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)100mOhm @ 3A, 10V
Vgs(th) (Max)1.55V @ 250µA
Gate Charge (Qg)13.8 nC @ 10 V
Input Capacitance (Ciss)451 pF @ 30 V
Power Dissipation (Max)1.2W (Ta)
Drive Voltage2.5V, 10V
Supplier Device PackageSOT-23
RoHSRoHS
Part StatusActive

Application & Notes

YJL03N06B-F2-0000HF by Yangzhou Yangjie Electronic Technology Co.,Ltd is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-236-3, SC-59, SOT-23-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 100mOhm @ 3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±16V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.55V @ 250µA
Rds On (Max) @ Id, Vgs100mOhm @ 3A, 10V
Power Dissipation (Max)1.2W (Ta)
Gate Charge (Qg) (Max) @ Vgs13.8 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds451 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Current - Continuous Drain (Id) @ 25°C3A (Ta)

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