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Yangzhou Yangjie Electronic Technology Co.,Ltd8-PowerLDFNRoHS

YJG15N15B-F1-0100HF

N-CH MOSFET 150V 15A PDFN5060-8L

Subcategory

Transistors Fets Mosfets Single

Package

8-PowerLDFN

Status

Active

$1.09 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandYangzhou Yangjie Electronic Technology Co.,Ltd
ModelYJG15N15B-F1-0100HF
Package / Case8-PowerLDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)150 V
Rds On (Max)75mOhm @ 5A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)11.6 nC @ 10 V
Input Capacitance (Ciss)625 pF @ 75 V
Power Dissipation (Max)45W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package8-PDFN (5x6)
RoHSRoHS
Part StatusActive

Application & Notes

YJG15N15B-F1-0100HF by Yangzhou Yangjie Electronic Technology Co.,Ltd is an N-channel power MOSFET rated at 150 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerLDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 75mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs75mOhm @ 5A, 10V
Power Dissipation (Max)45W (Tc)
Gate Charge (Qg) (Max) @ Vgs11.6 nC @ 10 V
Drain to Source Voltage (Vdss)150 V
Input Capacitance (Ciss) (Max) @ Vds625 pF @ 75 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C15A (Tc)

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