Yangzhou Yangjie Electronic Technology Co.,LtdTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

YJD45G10A-F1-0000HF

N-CH MOSFET 100V 45A TO-252

Parameters

Parameter	Value
Brand	Yangzhou Yangjie Electronic Technology Co.,Ltd
Model	YJD45G10A-F1-0000HF
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Rds On (Max)	17mOhm @ 20A, 10V
Vgs(th) (Max)	3V @ 250µA
Gate Charge (Qg)	16 nC @ 10 V
Input Capacitance (Ciss)	1135 pF @ 50 V
Power Dissipation (Max)	72W (Tc)
Drive Voltage	4.5V, 10V
Supplier Device Package	TO-252
RoHS	RoHS
Part Status	Active

Application & Notes

YJD45G10A-F1-0000HF by Yangzhou Yangjie Electronic Technology Co.,Ltd is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 17mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3V @ 250µA
Rds On (Max) @ Id, Vgs	17mOhm @ 20A, 10V
Power Dissipation (Max)	72W (Tc)
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	1135 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)

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