IXYSV2-PAKRoHS
VWM200-01P
MOSFET 6N-CH 100V 210A V2
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
V2-PAK
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | VWM200-01P |
| Package / Case | V2-PAK |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| FET Type | 6 N-Channel (3-Phase Bridge) |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) | 5.2mOhm @ 100A, 10V |
| Vgs(th) (Max) | 4V @ 2mA |
| Gate Charge (Qg) | 430nC @ 10V |
| Supplier Device Package | V2-PAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
VWM200-01P by IXYS is an N-channel power MOSFET rated at 100V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The V2-PAK package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.2mOhm @ 100A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 6 N-Channel (3-Phase Bridge) |
| FET Feature | Standard |
| Vgs(th) (Max) @ Id | 4V @ 2mA |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 100A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 430nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 210A |
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