Vishay General Semiconductor - Diodes DivisionSOT-227-4, miniBLOCRoHS
VS-GT100DA120UF
IGBT MOD 1200V 187A 890W SOT227
Category
Subcategory
Transistors Igbts Modules
Package
SOT-227-4, miniBLOC
Series
HEXFRED®
Status
Active
$42.71 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | VS-GT100DA120UF |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 890 W |
| Supplier Device Package | SOT-227 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
VS-GT100DA120UF by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-227-4, miniBLOC package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input | Standard |
| IGBT Type | Trench |
| Power - Max | 890 W |
| Configuration | Single |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 100A |
| Current - Collector (Ic) (Max) | 187 A |
| Input Capacitance (Cies) @ Vce | 6.15 nF @ 25 V |
| Current - Collector Cutoff (Max) | 100 µA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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