VS-GB75YF120N
IGBT MOD 1200V 100A ECONO2 4PACK
Transistors Igbts Modules
Module
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | VS-GB75YF120N |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 480 W |
| Supplier Device Package | ECONO2 4PACK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
VS-GB75YF120N by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for VS-GB75YF120N
Alternatives & Replacements
View All →BSM75GB120DLCHOSA1
IGBT MOD 1200V 170A 690W
FP50R06W2E3B11BOMA1
IGBT MODULE 600V 65A 175W
FS15R06XL4BOMA1
IGBT MODULE 600V 20A 81W
FS225R12KE4BOSA1
IGBT MOD 1200V 320A 1100W
F3L15R12W2H3B27BOMA1
IGBT MOD 1200V 20A 145W
BSM50GB120DLCHOSA1
IGBT MOD 1200V 115A 460W
All Technical Specifications
| Input | Standard |
| Power - Max | 480 W |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 4.5V @ 15V, 100A |
| Current - Collector (Ic) (Max) | 100 A |
| Current - Collector Cutoff (Max) | 250 µA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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