Vishay General Semiconductor - Diodes DivisionModuleRoHS
VS-GB50YF120N
IGBT MOD 1200V 66A ECONO2 4PACK
Category
Subcategory
Transistors Igbts Modules
Package
Module
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | VS-GB50YF120N |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 330 W |
| Supplier Device Package | ECONO2 4PACK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
VS-GB50YF120N by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| Input | Standard |
| Power - Max | 330 W |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 4.5V @ 15V, 75A |
| Current - Collector (Ic) (Max) | 66 A |
| Current - Collector Cutoff (Max) | 250 µA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.