IXYSY4-M6RoHS
VMM85-02F
MOSFET 2N-CH 200V 84A Y4
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
Y4-M6
Series
HiPerFET™
Status
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | VMM85-02F |
| Package / Case | Y4-M6 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 200V |
| Rds On (Max) | 25mOhm @ 500mA, 10V |
| Vgs(th) (Max) | 4V @ 8mA |
| Gate Charge (Qg) | 450nC @ 10V |
| Input Capacitance (Ciss) | 15000pF @ 25V |
| Power Dissipation (Max) | 370W |
| Supplier Device Package | Y4-M6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
VMM85-02F by IXYS is an N-channel power MOSFET rated at 200V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Y4-M6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 25mOhm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 370W |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 450nC @ 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 84A |
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