IXYSY3-LiRoHS
VMM1000-01P
MOSFET 2N-CH 100V 1000A Y3-LI
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
Y3-Li
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | VMM1000-01P |
| Package / Case | Y3-Li |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 100V |
| Rds On (Max) | 1.2Ohm @ 800A, 10V |
| Vgs(th) (Max) | 4V @ 10mA |
| Gate Charge (Qg) | 2355nC @ 10V |
| Supplier Device Package | Y3-Li |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
VMM1000-01P by IXYS is an N-channel power MOSFET rated at 100V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Y3-Li package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.2Ohm @ 800A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Vgs(th) (Max) @ Id | 4V @ 10mA |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 800A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2355nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1000A |
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