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UnitedSiCTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS

UF3C120080B7S

SICFET P-CH 1200V 28.8A D2PAK-7

Subcategory

Transistors Fets Mosfets Single

Package

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Status

Active

$14.09 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandUnitedSiC
ModelUF3C120080B7S
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)1200 V
Rds On (Max)105mOhm @ 20A, 12V
Vgs(th) (Max)6V @ 10mA
Gate Charge (Qg)23 nC @ 12 V
Input Capacitance (Ciss)754 pF @ 100 V
Power Dissipation (Max)190W (Tc)
Supplier Device PackageD2PAK-7
RoHSRoHS
Part StatusActive

Application & Notes

UF3C120080B7S by UnitedSiC is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 105mOhm @ 20A, 12V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±25V
TechnologySiCFET (Cascode SiCJFET)
Vgs(th) (Max) @ Id6V @ 10mA
Rds On (Max) @ Id, Vgs105mOhm @ 20A, 12V
Power Dissipation (Max)190W (Tc)
Gate Charge (Qg) (Max) @ Vgs23 nC @ 12 V
Drain to Source Voltage (Vdss)1200 V
Input Capacitance (Ciss) (Max) @ Vds754 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C28.8A (Tc)

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