Toshiba Semiconductor and StorageTO-3PLRoHS
TTC0002(Q)
TRANS NPN 160V 18A TO-3PL
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-3PL
Status
Active
$2.53 / unit (market reference)
MOQ: 100 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TTC0002(Q) |
| Package / Case | TO-3PL |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 180 W |
| Supplier Device Package | TO-3P(L) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TTC0002(Q) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3PL package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 180 W |
| Transistor Type | NPN |
| Frequency - Transition | 30MHz |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 900mA, 9A |
| Current - Collector (Ic) (Max) | 18 A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 1A, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
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