Micro Commercial CoTO-226-3, TO-92-3 (TO-226AA) Formed LeadsRoHS
TPT5609-A-AP
DIODE
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Micro Commercial Co |
| Model | TPT5609-A-AP |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 750 mW |
| Supplier Device Package | TO-92 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
TPT5609-A-AP by Micro Commercial Co is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 750 mW |
| Transistor Type | NPN |
| Frequency - Transition | 190MHz |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 80mA, 800mA |
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 500mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
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