Toshiba Semiconductor and Storage8-SOIC (0.173", 4.40mm Width)RoHS
TPC8207(TE12L)
MOSFET 2N-CH 20V 6A 8-SOP
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-SOIC (0.173", 4.40mm Width)
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TPC8207(TE12L) |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 20mOhm @ 4.8A, 4V |
| Vgs(th) (Max) | 1.2V @ 200µA |
| Gate Charge (Qg) | 22nC @ 5V |
| Input Capacitance (Ciss) | 2010pF @ 10V |
| Power Dissipation (Max) | 750mW |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
TPC8207(TE12L) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 4.8A, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 750mW |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 4.8A, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2010pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
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