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Toshiba Semiconductor and StorageTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

TK5P53D(T6RSS-Q)

MOSFET N-CH 525V 5A DPAK

TK5P53D(T6RSS-Q) by Toshiba Semiconductor and Storage
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Status

Active

$0.59 / unit (market reference)

MOQ: 2000 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandToshiba Semiconductor and Storage
ModelTK5P53D(T6RSS-Q)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)525 V
Rds On (Max)1.5Ohm @ 2.5A, 10V
Vgs(th) (Max)4.4V @ 1mA
Gate Charge (Qg)11 nC @ 10 V
Input Capacitance (Ciss)540 pF @ 25 V
Power Dissipation (Max)80W (Tc)
Drive Voltage10V
Supplier Device PackageD-Pak
RoHSRoHS
Part StatusActive

Application & Notes

TK5P53D(T6RSS-Q) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 525 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.5Ohm @ 2.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.4V @ 1mA
Rds On (Max) @ Id, Vgs1.5Ohm @ 2.5A, 10V
Power Dissipation (Max)80W (Tc)
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Drain to Source Voltage (Vdss)525 V
Input Capacitance (Ciss) (Max) @ Vds540 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C5A (Ta)

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