WeEn SemiconductorsTO-226-3, TO-92-3 (TO-226AA)RoHS
TB100EP
TB100/TO-92/STANDARD MARKING *
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-226-3, TO-92-3 (TO-226AA)
Status
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | WeEn Semiconductors |
| Model | TB100EP |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| Power Dissipation (Max) | 2 W |
| Supplier Device Package | TO-92-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TB100EP by WeEn Semiconductors is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 2 W |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 150mA, 750mA |
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 14 @ 100mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 700 V |
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