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STMicroelectronics8-PowerVDFNRoHS

STL57N65M5

MOSFET N-CH 650V 4.3A 8POWERFLAT

STL57N65M5 by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerVDFN

Series

MDmesh™ V

Status

Active

$12.39 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTL57N65M5
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)69mOhm @ 20A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)110 nC @ 10 V
Input Capacitance (Ciss)4200 pF @ 100 V
Power Dissipation (Max)2.8W (Ta), 189W (Tc)
Drive Voltage10V
Supplier Device PackagePowerFlat™ (8x8) HV
RoHSRoHS
Part StatusActive

Application & Notes

STL57N65M5 by STMicroelectronics is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 69mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs69mOhm @ 20A, 10V
Power Dissipation (Max)2.8W (Ta), 189W (Tc)
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds4200 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.3A (Ta), 22.5A (Tc)

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