PC
STMicroelectronics8-PowerVDFNRoHS

STL100N10F7

MOSFET N-CH 100V 80A POWERFLAT

STL100N10F7 by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerVDFN

Series

DeepGATE™, STripFET™ VII

Status

Active

$2.14 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTL100N10F7
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)7.3mOhm @ 19A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)80 nC @ 10 V
Input Capacitance (Ciss)5680 pF @ 50 V
Power Dissipation (Max)5W (Ta), 100W (Tc)
Drive Voltage10V
Supplier Device PackagePowerFlat™ (5x6)
RoHSRoHS
Part StatusActive

Application & Notes

STL100N10F7 by STMicroelectronics is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.3mOhm @ 19A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs7.3mOhm @ 19A, 10V
Power Dissipation (Max)5W (Ta), 100W (Tc)
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds5680 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C80A (Tc)

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